Power supply unit with GaN LED street light
Equipped with FET using gallium nitride (GaN) epiwafer technology of NTT laboratories
High energy efficiency significantly reduces standby power consumption.
GaN-equipped LED streetlights are expected to contribute to a decarbonized society.
Replacing sodium lamps with LED lamps can reduce annual power consumption, but using it in combination with a power supply equipped with a GaN device will yield a high power reduction effect. Even if you already have LED streetlights, you can save even more. Depending on the scene, you can also control the brightness, turn the lights on and off, and so on. CO 2 reduction measures that are one step ahead of simple replacement with LED lighting are possible.
Three key features of GaN-equipped power supply unit for LED streetlights.
Significantly reduce power consumption
Because GaN devices have high energy conversion efficiency, they reduce power consumption when replacing conventional sodium lamps.
Centralized control of lighting
DALI *1 compliant, allowing for centralized lighting control. This reduces unnecessary lighting and improves energy efficiency.
Service scalability
The system allows for flexible service expansion, including brightness control and security features. *1 DALI: Digital Addressable Lighting Interface, an international standard for lighting control.
GaN (gallium nitride) is a wide-bandgap semiconductor material characterized by its extreme hardness, mechanical stability, large heat capacity, and high thermal conductivity.
By using GaN as the semiconductor material, it is possible to realize devices with higher energy conversion efficiency and superior energy-saving and CO2 reduction effects compared to conventional silicon devices.
Basic specifications
Power supply with GaN
| output current | 1A-2A |
|---|---|
| Output Voltage | 24VDC-48VDC |
| output power | 96W |
| Standby power | <0.5W |
| Input Voltage | 100 VAC～305 VAC |
| input frequency | 47 Hz～63 Hz |
| average efficiency | >90% (230 VAC) |
| PF | >0.95 (230 VAC/50Hz Full load) |
| number of outputs | 1 |
| control method | DALI Dimming Protocol |
| Dimensions/weight | 199 mm × 63 ｍｍ × 35.5 mm / 850 g |
LED street light section
| total luminous flux | 13,500 lm |
|---|---|
| beam angle | 150 × 70 degrees (optional) |
| Input Voltage | 90 VAC-305 VAC |
| power consumption | 90 W |
| efficiency | 150 lm / W |
| color temperature | 5,000 K |
| lifespan | 60,000 h (85%) |
| waterproof and dustproof | IP66 |
| Compatible socket | NEMA / Zhaga (book18) |
| mounting pole diameter | 80 mm (A separate 60 mm - 80 mm conversion adapter can be used.) |
| Size | 524mm × 312mm × 98mm / 4.7kg |
Improved conversion efficiency through switching to GaN semiconductors
By using GaN as a semiconductor material, it is possible to realize devices with higher energy conversion efficiency, energy saving, and CO2 reduction effects than conventional silicon devices.
When converting 100W of DC power to AC power, Si generates a loss of 5W, but by applying GaN, the loss can be reduced to 0.75W.
About GaN products and technology
- USB fast charger with GaN
- Power Delivery (PD) compatible, small and high performance charger. With this single unit, you can charge your smartphone and laptop at the same time, eliminating the need to carry several heavy AC adapters!
- Nitride semiconductor epitaxial wafer
- For inquiries about GaN technology, introduction of GaN wafers to your company's products, purchase requests, etc., please contact us from the Nitride Semiconductor Epitaxial Wafers page.
inquiry
Please feel free to contact us for requests for materials, consultation on introduction, requests for estimates, etc.